On-die anti-resonance structure for integrated circuit

ABSTRACT

A structure and method for reducing the effects of chip-package resonance in an integrated circuit assembly is described. A series RLC circuit is employed to reduce the output impedance of the power delivery system at the resonance frequency.

RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.11/382,668, filed May 10, 2006, now U.S. Pat. No. 7,633,773 which isincorporated herein its entirety by reference.

FIELD OF THE INVENTION

This invention relates to electronic circuitry and, in particular, tointegrated circuit structures and their methods of construction.

BACKGROUND

The electronic components of an integrated circuit chip, in order tooperate properly, need to be supplied with a constant power voltage asdefined by a specified tolerance range (e.g., 5%). Available regulatedpower supplies for integrated circuits may readily meet such a toleranceat DC frequencies. The components of a typical integrated circuit,however, include high-speed switches that transiently draw current atvery high frequencies. As the operating frequency increases, the outputimpedance of the power delivery system increases due to inductance inthe system, contributed primarily by conductors that connect the chip toa package structure in a completed integrated circuit assembly. Suchincreased output impedance can cause the voltage supplied to the chip todrop below tolerance. Decoupling capacitors, or decaps, may be added tothe system in parallel with the inductance in order to reduce the outputimpedance. The decoupling capacitance added to the chip lowers theoutput impedance of the power delivery system at high frequenciesbecause capacitor impedance is inversely proportional to frequency.Decaps, usually located on the chip near the current drawing components,store charge and give energy back to the chip components as needed whichtends to hold the power supply voltage constant during high frequencyoperation. With decoupling capacitors, it is possible to make a lowimpedance power delivery system that meets a specified target impedanceup to very high frequencies (e.g., several hundred Mhz).

As noted above, the power delivery system possesses both inductance,mainly due to the package connections, and capacitance, due to decaps aswell as the inherent capacitance on the chip due to various componentsand structures. The inductance of the package, however, forms a parallelRLC circuit with the capacitance of the chip that resonates at thefrequency f= 1/2 π(LC)^(1/2), where L is the equivalent seriesinductance of the system and C is the total capacitance on the chipbetween the voltage and ground nodes. The impedance of an inductance inparallel with a capacitance is maximized at the resonance frequency. Atthat frequency, the chip components therefore see a high outputimpedance from the power delivery system, usually much higher than thetarget impedance. The capacitance on the chip is not low enough inimpedance and does not store enough charge to deliver the current neededby the chip components at the resonance frequency. The electroniccomponents of the chip may then be starved for current, and the powersupply voltage supplied to the chip can drop out of the specifiedtolerance range.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an exemplary integrated circuit assembly.

FIG. 2 shows an electrical equivalent of the integrated circuitassembly.

FIG. 3 shows the integrated circuit assembly with an anti-resonancestructure added.

FIG. 4 depicts an exemplary integrated circuit assembly that includes aDRAM package.

FIG. 5 shows the output impedance of the assembly depicted in FIG. 4.

FIG. 6 depicts the assembly of FIG. 4 with an added decap.

FIG. 7 shows the output impedance of the assembly depicted in FIG. 6.

FIG. 8 depicts the assembly of FIG. 6 with an anti-resonance structureadded.

FIG. 9 shows the output impedance of the assembly depicted in FIG. 8.

FIG. 10 shows the output impedance of the assembly depicted in FIG. 8with a different decap capacitance.

DETAILED DESCRIPTION

In the design of high-speed digital systems, the power delivery systemhas assumed greater importance due to the ever increasing requirementsof integrated circuit chips for higher current consumption and lowersupply voltages. A good power delivery system should deliver arelatively constant voltage to its load and generate as little voltagenoise as possible. One parameter that reflects the performance of apower delivery system is its output impedance, which can be defined asthe rate at which the supplied voltage changes with respect to loadcurrent. The output impedance thus indicates how much voltage noise willbe induced on a power rail for given specific current consumption, wherethe latter may vary over a wide range of frequencies. Due to therandomness of bit patterns that can occur in a typical digital system, anoise current profile could have a frequency content that spansvirtually the entire spectrum. If the power delivery system is not ableto adequately supply current at certain frequencies, significant voltagefluctuations can occur that lead to system failure. It is thereforerequired that the power delivery impedance be below the target impedanceover the entire system bandwidth. The target impedance is usuallydetermined by a specified voltage margin and current profile for aspecific system. For example, if a part has a current profile with anamplitude of 20 mA at a certain frequency and a voltage margin of 20 mV,then the target impedance at that frequency is 1 Ohm.

As above, a power delivery system possesses both inductance, mainly dueto the package connections, and capacitance such that the inductance ofthe package, forms a parallel RLC circuit with the capacitance of thechip that resonates at a particular frequency to result in an increasedoutput impedance, referred to as chip-package resonance. Describedherein is a structure and method for reducing the effects ofchip-package resonance in an integrated circuit assembly. In oneembodiment, the integrated circuit assembly comprises an integratedcircuit structure that includes a chip having electronic circuitcomponents fabricated therein with the chip being connected to apackage, a power delivery path incorporated into the integrated circuitstructure for receiving power from a power supply, wherein the impedanceof the power delivery path exhibits at least one resonance peak at aparticular operating frequency of the electronic circuit components dueto the inductance and capacitance associated with the chip and package,and a series RLC circuit connected to the integrated circuit structure,wherein the component values of the RLC circuit are selected to reducethe resonance peak of the power delivery path impedance.

FIG. 1 shows a cross section of an exemplary integrated circuit chip 100(also referred to as a die) mounted on an electronic package 110. Thechip or die 100 is made of a semiconductor such as silicon and hasvarious electronic components (mainly transistors) fabricated therein.The chip may be, for example, a microprocessor or a memory chip. Thechip 100 and package 110 are attached to a printed circuit board or PCB130 through a socket 120. Conductors 140 provide both signal and powerpaths between the PCB 130 and the chip 100 through the package 110 andsocket 120. The power delivery system includes a regulated power supply150 that connects to V_(dd) and ground power planes in the PCB 130. TheV_(dd) and ground power planes are connected to corresponding powerpaths that convey power through the socket 120 and package 110 and thenfinally to the electronic components of the chip 100.

The physical structure depicted in FIG. 1 can be electrically modeled asshown in FIG. 2. The power supply 150 connects its ground and powerterminals to power paths 151 and 152 that traverse the socket andpackage combination 115 and then connect to a variable resistor 101within the chip 100 representing the load. In each of the power pathsare inductors 153 and 154 that represent the total inductance in thepower delivery system as contributed primarily by the package. Resistors155 and 156 represent the total resistance in the power paths thatresult in a resistive voltage drop (IR drop) as current flows throughthe system. A capacitor 102 is connected in parallel with the variableresistor 101 to represent the capacitance of the system as contributedby the decaps added for decoupling and the inherent capacitance of thechip components. In operation, the variable resistor 101 variably drawscurrent from the power supply at different frequencies as the componentsof the chip switch on and off in response to program code, for example.At high frequencies of current draw, the voltage drop across theinductors 153 and 154 becomes significant. The capacitor 102,representing the decaps, counteracts the inductive voltage drop byalternately charging and supplying current to the variable resistor 101in a manner that keeps the voltage seen by the resistor relativelyconstant. From the viewpoint of the output impedance of the powerdelivery system as seen from the resistor 101, the capacitor 102connected across the power paths presents a low AC impedance at highfrequencies. As the frequency decreases, however, the impedance of thecapacitor 102 increases, with the total output impedance as seen fromthe chip reaching a maximum when the frequency reaches the resonancefrequency of the parallel combination of capacitor 102 and inductors 153and 154. At this point, the total output impedance of the power deliverysystem may exceed the target impedance so that the voltage supplied tothe chip becomes inadequate for proper operation.

In order to counteract the undesirable resonance effects describedabove, an anti-resonance structure can be added as shown in FIG. 3. Inthis embodiment, the anti-resonance structure is a series RLC circuitconnected in parallel with the capacitor 102 and is made up of aresistor R_(a), an inductor L_(a), and a capacitor C_(a). Theanti-resonance structure is preferably located on the chip but couldalso be located elsewhere. In operation, the anti-resonance structure isdesigned to resonate at approximately the same frequency as the parallelcombination of capacitor 102 and inductors 153 and 154. At the operatingfrequency at which the output impedance would otherwise be at itsmaximum as described above, the impedance of the anti-resonancestructure is minimized so that the overall output impedance isdecreased. Ideally, the decrease in the output impedance brought aboutby the anti-resonance structure maintains the output impedance below thetarget impedance as the operating frequency varies.

FIG. 4 illustrates a DRAM package 400 connected to an ideal power supply450 that has been simulated in order to demonstrate the effects of theanti-resonance structure described above. The system includes power rail451 and ground rail 452 that distribute power from the power supply 450through the package and into the DRAM chip. The power supply is shown asbeing connected to the ball side of the package. On the die side of thepackage is shown an exemplary driver 460. FIG. 5 shows the outputimpedance of the power delivery system as looking from the die sidebetween the power rails without any decoupling. It shows that at 3.61GHz, the power delivery structure has an impedance of 15.55 Ohm. If thecurrent drawn by the chip has an amplitude of 20 mA at 3.61 GHz, it willinduce a voltage noise of 311 mV, which is unacceptable for most lowvoltage applications. To improve the performance of the power deliverysystem, one or multiple stages of decoupling capacitors can be added.For high frequency decoupling, on-die decaps are much more effectivethan on-package or onboard decap due to little or no associated ESL(equivalent series inductance). FIG. 6 shows the system of FIG. 4 with arepresentative decap 453 added between the power rail 451 and groundrail 452. FIG. 7 shows the impedance of the same power delivery systemin FIG. 4 but with 1000 pF of on-die decap. The original resonance peakat 3.61 GHz disappears and the overall impedance is greatly reduced.However, adding on-die decaps inevitably creates parallel resonance withthe package inductance, shown in FIG. 7 as a resonance at 630 MHz. Thisresonance still has an impedance of 3.286 Ohm which could exceed targetimpedance.

Different methods could be used to suppress this parallel resonancepeak. A controlled series damping resistance could be added to thepackage, but that would increase the IR drop at low frequency. Anotheralternative is to add series damping resistance with on-die decap, butthat would increase the IR drop at high frequency. The resonance couldbe reduced without increasing IR drop by adding more on-die decap, butthis consumes several times more die space (to reduce the peak impedanceby N-fold, the on-die decap generally needs to increase N-fold).

The on-die anti-resonance structure described herein effectivelysuppresses the parallel resonance created by on-die decaps and packageinductance without the disadvantages of the alternative techniquesenumerated above. FIG. 8 illustrates the anti-resonance structure addedto the power delivery system of FIG. 4 as a series RLC circuit inparallel with the on-die decaps and made up of resistor Ra, inductor La,and capacitor Ca. The structure generally only consumes several percentof on-die decap space and can be placed relatively flexibly around theI/O circuitry of the chip (e.g., it does not need to be immediately nextto the driver 460 as do on-die decaps). Since the structure is inparallel with the on-die decap, it does not introduce any additional IRdrop at either high or low frequencies. The resonance frequency of thestructure, as determined by the values of La and Ca, is carefullyselected or calculated to effectively reduce the parallel resonancepeak. The resistor Ra acts to damp the entire resonance loop withoutintroducing additional IR drop. In

FIG. 7, with on-die decap, the power delivery impedance shows aresonance at 630 MHz. In order to cancel this parallel resonance, thevalues of Ra and La are selected to create a series resonance at 630 MHzas well. The capacitance is chosen at Ca=80 pF in this example forsimplicity making the inductance value of La 0.78 nH. The value of thedamping resistor Ra may be set as an optimization variable in ADS(Advance Design System) simulation tools to obtain critical damping ofthe resonance circuitry. The optimization process results in aresistance value Ra of 1.15 Ohm. These values of Ca, La and Ra are alleasily realized as an on-die structure.

The simulation results for the anti-resonance structure are shown inFIG. 9. The peak impedance is reduced from 3.286 Ohm in FIG. 6 to 0.931Ohm, and no additional IR drop is introduced at either low or highfrequencies. Also, if a portion of the on-die decap space is reservedfor the anti-resonance structure, then virtually no additional die spaceis required for the implementation. FIG. 10 shows the same simulationbut, instead of using 1000 pF of on-die decap, 920 pF of on-die decap isused instead, reserving the remaining 80 pF for the anti-resonancestructure. Since the parallel resonance created by 920 pF of on-diedecap is slightly different with that of 1000 pF, the inductance valueLa in the anti-resonance structure is slightly tuned to 0.72 nH. Theresult is that the peak impedance is reduced from 3.286 Ohm to 0.953Ohm.

In different embodiments, the capacitance element of the anti-resonancestructure may be implemented by using several percent more of on-diedecap space or simply reducing the on-die decap space by several percentand using the freed up space for the capacitance element of theanti-resonance structure. Since the anti-resonance structure can beplaced flexibly around the I/O circuitry, the connecting metal trace 454from the structure to the on-die decap could be used as the inductanceelement. The trace width and trace length may be easily adjusted (sincethe anti-resonance structure may be flexibly located) to obtain aninductance value that results in the appropriate resonance frequency forthe anti-resonance structure. The metal trace may also serve as theresistance element of the structure. Alternatively, a poly-resistorcould be used. Precise calculation of the trace length and width can beperformed using a 3D electromagnetic field solver or a similarextraction tool.

The on-die anti-resonance structure as described herein may findapplications in low-voltage, high-speed signaling chips, especiallysince on-die decaps have become more widely used for high-frequencydecoupling of power delivery systems. As the supply voltage of digitalsystems is pushed ever lower even while the current consumption of thesystem increases, the performance requirements of the power deliverysystem becomes more stringent. The wide use of on-die decaps inevitablybrings along the parallel resonance problem in the impedance profilewhich poses a serious threat to the overall power integrity of thesystem. The anti-resonance structure as described effectively addressesthis parallel resonance problem. It reduces the peak impedance atresonance region by several times with little or no additional diespace, or any adverse effect on other frequency range of the impedanceprofile. A several times reduction in impedance directly translates toseveral times reduction of voltage fluctuation given the same currentprofile, which can be quite significant in a low voltage application.

Although the invention has been described in conjunction with theforegoing specific embodiment, many alternatives, variations, andmodifications will be apparent to those of ordinary skill in the art.Such alternatives, variations, and modifications are intended to fallwithin the scope of the following appended claims.

1. An integrated circuit structure, comprising: a package for anintegrated circuit chip; an integrated circuit chip connected to thepackage; a power delivery path incorporated into the integrated circuitstructure for receiving power from a power supply, wherein the impedanceof the power delivery path exhibits at least one resonance peak at anoperating frequency due to inductance and capacitance associated withthe chip and package; a series RLC circuit connected to the integratedcircuit structure, wherein the series RLC circuit has resistance,inductance, and capacitance components; and, wherein the inductancecomponent of the series RLC circuit is implemented with a conductingmetal trace having dimensions such that the resonance frequency of theseries RLC circuit approximately matches the frequency of the resonancepeak of the power delivery path impedance.
 2. The integrated circuitstructure of claim 1 wherein the resistance component of the series RLCcircuit is implemented with the conducting metal trace.
 3. Theintegrated circuit structure of claim 1 further comprising a printedcircuit board to which are attached the integrated circuit and package.4. The integrated circuit structure of claim 1 wherein the series RLCcircuit is located on the integrated circuit chip.
 5. The integratedcircuit structure of claim 1 wherein the series RLC circuit is placed inparallel with the capacitance associated with the integrated circuitchip.
 6. The integrated circuit structure of claim 1 wherein thecapacitance associated with the integrated circuit chip includes one ormore decoupling capacitors.
 7. The integrated circuit structure of claim1 wherein the capacitance component of the series RLC circuit isimplemented with one or more decoupling capacitors.
 8. The integratedcircuit structure of claim 1 wherein the trace width and trace length ofthe conducting metal trace are adjusted using an electromagnetic solverso that the resonance frequency of the series RLC circuit approximatelymatches the frequency of the resonance peak.
 9. The integrated circuitstructure of claim 1 wherein the resistance component of the series RLCcircuit is implemented with the conducting metal trace connected to oneor more decoupling capacitors.
 10. The integrated circuit structure ofclaim 1 wherein the resistance component of the series RLC circuit isimplemented with a poly-resistor.
 11. The integrated circuit structureof claim 1 wherein the integrated circuit is a memory chip.
 12. Theintegrated circuit structure of claim 1 wherein the integrated circuitis a microprocessor.
 13. The integrated circuit structure of claim 11further comprising a printed circuit board to which are attached theintegrated circuit and package.
 14. The integrated circuit structure ofclaim 11 wherein the resistance component of the series RLC circuit isimplemented with the conducting metal trace.
 15. The integrated circuitstructure of claim 11 wherein the capacitance component of the seriesRLC circuit is implemented with one or more decoupling capacitors. 16.The integrated circuit structure of claim 11 wherein the capacitanceassociated with the integrated circuit chip includes one or moredecoupling capacitors.
 17. The integrated circuit structure of claim 11wherein the series RLC circuit is located on the integrated circuitchip.
 18. The integrated circuit structure of claim 11 wherein theseries RLC circuit is placed in parallel with the capacitance associatedwith the integrated circuit chip.
 19. The integrated circuit structureof claim 12 wherein the capacitance associated with the integratedcircuit chip includes one or more decoupling capacitors.
 20. Theintegrated circuit structure of claim 12 wherein the capacitancecomponent of the series RLC circuit is implemented with one or moredecoupling capacitors.